Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film

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概要

• 論文の詳細を見る

• This paper reports a concise short-channel effect model for inversion-type ultrathin silicon-on-insulator (SOI) metal-oxide-silicon field-effect transistors (MOSFETs). As verified by the 2D simulation data, the concise short-channel effect model based on partitioning of the thin-film region provides a good prediction. According to the analytical model, the short-channel effect is strongly influenced by its thin-film thickness.

• 社団法人応用物理学会の論文
• 1995-12-15

著者

• Kuo James

  Department Of Electrical Engineering National Taiwan University

• CHEN Shiao-Shien

  Department of Electrical Engineering, National Taiwan University

• Chen Shiao-shien

  Department Of Electrical Engineering National Taiwan University

関連論文

• Concise Analytical Model for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices with Consideration of Energy Transport
• An Analytical Velocity Overshoot Model for 0.1 μm N-Channel Metal-Oxide-Silicon Devices Considering Energy Transport
• Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film
• A Closed-Form Physical Drain Current Model Considering Energy Balance Equation and Source Resistance for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices

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