A Closed-Form Physical Drain Current Model Considering Energy Balance Equation and Source Resistance for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices

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概要

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• This paper reports a concise physical model considering energy transport and source resistance for deep submicron n-channel metal-oxide-semiconductor (NMOS) devices. As verified by the experimental data, the closed-formanalytical model shows good accuracy in the IV characteristics.

• 社団法人応用物理学会の論文
• 1994-11-15

著者

• Ma Shyh-yih

  Department Of Electrical Engineering National Taiwan University

• Kuo James

  Department Of Electrical Engineering National Taiwan University

関連論文

• Concise Analytical Model for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices with Consideration of Energy Transport
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• Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film
• A Closed-Form Physical Drain Current Model Considering Energy Balance Equation and Source Resistance for Deep Submicron N-Channel Metal-Oxide-Semiconductor Devices

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