Study of Zinc-Delta-Doped Strained Quantum Well InGaAs/GaAs p-Channel Heterostructure Field-Effect Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-04-15
著者
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Hsu Wei
Department Of Electrical Engineering National Cheng Kung Unviersity
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HSU RONG
Department of Pharmacognosy College of Pharmacy University of Rhode Island
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Wu Y
National Chiao Tung Univ. Hsinchu Twn
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Hsu Wei
Department Of Chemical Engineering National Taiwan University Taipei
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Kao Ming
Department Of Electrical Engineering National Cheng Kung Unviersity
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Su Jan
Department Of Electrical Engineering National Cheng Kung Unviersity
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WU Yu
Department of Surgery, Second Affiliated Hospital, School of Medicine, Zhejiang University
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WANG Jiann
Department of Electrical Engineering, National Cheng Kung Unviersity
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Hsu Rong
Department Of Electrical Engineering National Cheng Kung Unviersity
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Wu Yu
Department Of Surgery Second Affiliated Hospital School Of Medicine Zhejiang University
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Wang Jiann
Department Of Electrical Engineering National Cheng Kung Unviersity
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WU Yu
Department of Electrical Engineering, National Cheng Kung Unviersity
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