Observation of <100> Dark Line Defects in Optically Degraded ZnS_xSe_<1-x>-based Light Emitting Diodes by Transmission Electron Microscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-10-15
著者
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Kuo L‐h
Joint Res. Center For Atom Technol. Tsukuba Jpn
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Kuo Li-hsin
Department Of Materials And Nuclear Engineering University Of Maryland:(present Address) Joint Resea
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Kuo Li-hsin
Joint Research Center For Atom Technology (jrcat)
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SALAMANCA-RIBA Lourdes
Department of Materials and Nuclear Engineering, University of Maryland
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Salamanca-riba Lourdes
Department Of Materials And Nuclear Engineering University Of Maryland
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Salamanca-Riba Louders
Department of Materials and Nuclear Engineering, University of Maryland
関連論文
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement
- Observation of Dark Line Defects in Optically Degraded ZnS_xSe_-based Light Emitting Diodes by Transmission Electron Microscopy
- Non-Contact and Non-Destructive Measurement of Carrier Concentration of Nitrogen-Doped ZnSe by Reflectance Difference Spectroscopy
- Structural Change of As-Stabilized GaAs(001)-(2 × 4) and -e(4 × 4)Induced by Zinc Exposure
- Characterization of ZnSe/GaAs(001) Heteroepitaxial Interfaces by X-Ray Reflectivity Measurement