Source/Drain Ion Implantation into Ultra-Thin-Single-Crystalline-Silicon-Layer of Separation by IMplanted OXygen (SIMOX) Wafers

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概要

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• Problems associated with ion implantation into ultra-thin-film SIMOX (Separation by IMplanted OXygen) of SOI (silicon on insulator) structures are discussed. We realized n-type source/drain region with lower resistance by P^+ ion implantation. To decrease the resistance of the implanted layer, the amorphized high-dose layer must be recrystallized by annealing. We show that the possibility of recrystallization can be predicted by TRIM simulation. Moreover, it was found that excess phosphorus above the solid solubility segregates in the Si/SiO_2 interface.

• 社団法人応用物理学会の論文
• 1996-10-15

著者

• Nakata Jyoji

  Ntt Basic Research Laboratories

• SAKAKIBARA Yutaka

  NTT System Electronics Laboratories

• TAKAHASHI Mitsutoshi

  NTT System Electronics Laboratories

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• Source/Drain Ion Implantation into Ultra-Thin-Single-Crystalline-Silicon-Layer of Separation by IMplanted OXygen (SIMOX) Wafers

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