Characterization of GaAs Films Grown on Vicinal Si(110) Substrates by Molecular-Beam Epitaxy

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概要

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• The optical and structural properties of GaAs films grown at temperatures of between 460 and 690℃ on vicinal Si(110) substrates by molecular-beam epitaxy are discussed and compared with the optical properties of (110) GaAs with (100) GaAs. We have discussed the residual strain and stress after annealing. The residual stress in films shifted the PL spectra to lower photon energies as the off-angle increased toward the [001] direction. The orientation dependence of the stress is explainable by the mechanical properties of GaAs films. The thermal stress and strain of (110) GaAs were larger than those of (100) GaAs after annealing. The thermal stress of GaAs on vicinal Si(110) tilted at 6° toward the [001] direction increased from 3×10^9 to 4.1×10^9 dyn/cm^2 after 1000℃ annealing.

• 社団法人応用物理学会の論文
• 1995-09-15

著者

• Yodo Tokuo

  Optoelectronics Technology Research Laboratory

関連論文

• Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
• Growth and Characterization of GaAs/GaSe/Si Heterostructures
• Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy
• In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System
• Initial Growth of GaAs on Vicinal Si(111) Substrates by Molecular-Beam Epitaxy
• Characterization of GaAs Films Grown on Vicinal Si(110) Substrates by Molecular-Beam Epitaxy

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