Initial Growth of GaAs on Vicinal Si(111) Substrates by Molecular-Beam Epitaxy

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概要

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• GaAs grown on vicinal Si(111) substrates by molecular-beam epitaxy showed a phenomenon peculiar to a (111) interface due to bond-matching during the initial growth stage (layer thickness (t), t≤200 nm), accompanying the growth of GaAs islands with perfect-crystalline quality. The best full-width at half-maximum of (111) GaAs X-ray diffraction in GaAs layers on vicinal Si(111) tilted by 6° toward the [01^^-1] direction was 100 arc.s. at a layer thickness of 200 nm.

• 社団法人応用物理学会の論文
• 1995-10-01

著者

• Yodo Tokuo

  Optoelectronics Technology Research Laboratory

関連論文

• Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
• Growth and Characterization of GaAs/GaSe/Si Heterostructures
• Effects of High-Temperature Annealing on the Structural and Crystalline Qualities of GaAs Heteroepitaxial Layers Grown on Si Substrates Using Two-Step and Direct Methods by Molecular-Beam Epitaxy
• In Situ Observations of GaAs Initial Growth on Si Substrates Studied Using an Ultrahigh-Vacuum Transmission-Electron Microscope/Molecular-Beam Epitaxy System
• Initial Growth of GaAs on Vicinal Si(111) Substrates by Molecular-Beam Epitaxy
• Characterization of GaAs Films Grown on Vicinal Si(110) Substrates by Molecular-Beam Epitaxy

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