Preparation and Characterization of Sol-Gel Derived Epitaxial and Oriented Pb(Zr_<0.52>Ti_<0.48>)O_3 Thin Films (<Special Issue> FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
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概要
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Epitaxial and oriented Pb(Zr_<0.52>Ti_<0.48>)O_3 (PZT) thin films were prepared from nonhydrolyzed polymeric precursors. PZT thin films with a single (001) orientation were prepared on SrTiO_3 (100) and MgO (100) substrates by solid-phase epitaxial growth. Crystallization of sol-gel PZT with a (111) preferred orientation was also observed on sapphire (0001) substrates. The guided wave modes were excited by a prism coupling method for PZT thin films crystallized on MgO (100) at 700℃, and the verified refractive index was as high as 2.561. Dielectric constant and remnant polarization of epitaxial PZT thin films, crystallized on conductive Nb-SrTiO_3 (100) substrates at 650℃, were 448 at 10 kHz and 15 μC/cm^2, respectively.
- 社団法人応用物理学会の論文
- 1994-09-30
著者
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NASHIMOTO Keiichi
Materials Research Laboratory, Fuji Xerox Co., Ltd.
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NAKAMURA Shigetoshi
Materials Research Laboratory, Fuji Xerox Co., Ltd.
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Nashimoto Keiichi
Materials Research Laboratory Fuji Xerox Co. Ltd.
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Nakamura Shigetoshi
Materials Research Laboratory Fuji Xerox Co. Ltd.
関連論文
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- Orientation of MgO Thin Films on Si(100) and GaAs(100) Prepared by Electron-Beam Evaporation
- Preparation and Characterization of Sol-Gel Derived Epitaxial and Oriented Pb(Zr_Ti_)O_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)