Orientation of MgO Thin Films on Si(100) and GaAs(100) Prepared by Electron-Beam Evaporation

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概要

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• MgO thin films were prepared on Si(100) and GaAs(100) by electron-beam evaporation. MgO thin films with (100) orientation were obtained at 610℃ with the deposition rate of 0.5 Å/s, and those with (111) orientation were obtained below 440℃ with deposition rate higher than 8 Å/s, on Si substrates. (100) oriented MgO thin films, however, grew on Si at 440℃ upon decreasing the deposition rate to 0.3 Å/s. MgO thin films with (100) orientation having cube-on-cube epitaxy were obtained on GaAs substrates at the temperature as low as 280℃ even at the deposition rate of 1.4 Å/s.

• 社団法人応用物理学会の論文
• 1994-06-01

著者

• NASHIMOTO Keiichi

  Materials Research Laboratory, Fuji Xerox Co., Ltd.

• Masuda Atsushi

  Materials Research Laboratory Fuji Xerox Co. Ltd.:(present Address) Department Of Electrical And Com

• Nashimoto Keiichi

  Materials Research Laboratory Fuji Xerox Co. Ltd.

関連論文

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• Metal Alkoxide Solution-Derived Epitaxial Lead Titanate-Based Thin-Film Optical Waveguides
• Orientation of MgO Thin Films on Si(100) and GaAs(100) Prepared by Electron-Beam Evaporation
• Preparation and Characterization of Sol-Gel Derived Epitaxial and Oriented Pb(Zr_Ti_)O_3 Thin Films ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)

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