Raman Scattering Spectroscopy of 3C-SiC(111) Heteroepitaxial Films

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Raman scattering spectra of 3C-SiC films, grown heteroepitaxially on Si(111) substrates by chemical vapor deposition (CVD), were measured to obtain information on the relaxation mechanism of the internal stress of the 3C-SiC films. The internal stress is found to be relaxed by the formation of the voids at the interface between 3C-SiC film and Si substrate during the CVD process.
社団法人応用物理学会の論文
1994-02-15

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