Electroluminescent Device Made of Diamond
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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Shiomi H
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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Fujimori N
Sumitomo Electric Ind. Ltd. Hyogo Jpn
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NISHIBAYASHI Yoshiki
Sumitomo Electric Industries, Ltd.
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Nishibayashi Y
Sumitomo Electric Industries Ltd. Hyogo
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Nishibayashi Yoshiki
Sumitomo Electric Industries Ltd.
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FUJIMORI Naoji
Sumitomo Electric Industries Ltd. Itami Research Laboratories
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SHIOMI Hiromu
Sumitomo Electric Industries Ltd. Itami Research Laboratories
関連論文
- Mechanism of Field Emission from a Highly Phosphorous-Doped Chemical Vapor Deposition Diamond (111) Surface
- Electroluminescent Device Made of Diamond
- Characterization of Boron-Doped Diamond Epitaxial Films
- High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films
- Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method
- Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films
- Epitaxial Growth of CdTe by H_2 Sputtering : Semiconductors and Semiconductor Devices
- Deposition of Hydrogenated Microcrystalline Films of CdTe by Chemical Sputtering in Hydrogen : Surfaces, Interfaces and Films
- Epitaxial Growth of CdTe on InSb(100) by RF Sputtering
- Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- Epitaxially Grown Diamond (001) 2×1/1×2 Surface Investigated by Scanning Tunneling Microscopy in Air
- Diels-Alder Reaction on the Clean Diamond (100) 2×1 Surface
- Surface Phonons, Electronic Structure and Chemical Reactivity of Diamond (100)(2×1) Surface
- Twinning Structure and Growth Hillock on Diamond (001) Epitaxial Film