Improvement of Phase-Shifter Edge Line Mask Method

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概要

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• Two kinds of improved phase-shifter edge line (PEL) masks have been developed for critical dimension control. One new mask consists of a chrome line and partially overlapped shifter film. In this mask, exposed pattern sizes are controlled by adjusting the chrome linewidth. It has been found that a set of repeated fine-chrome lines ("blind") acts as a uniform light attenuator. The other new mask ("blind PEL mask") has been devised by combining the "blind" and shifter pattern. These new masks make it possible to delineate different-sized fine patterns (≥0.2 μm) at the same exposure dose. With the "blind PEL-mask", unnecessary shifter edge patterns can be eliminated by only one-time exposure.

• 社団法人応用物理学会の論文
• 1991-11-30

著者

• Jinbo Hideyuki

  Semiconductor Technology Lab. Oki Electric Industry Co. Lid.

• Yamashita Yoshio

  Semiconductor Technology Lab. Oki Electric Industry Co. Lid.

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• Improvement of Phase-Shifter Edge Line Mask Method : Photolithography
• Improvement of Phase-Shifter Edge Line Mask Method

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