AES and XPS Studies of Surface of Al_xGa_<1-x>As (110) Treated by Ammonium Sulfide

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1990-11-20

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AES and XPS Studies of Surface of Al_xGa_As (110) Treated by Ammonium Sulfide
High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates : Waves, Optics and Quantum Electronics
Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
Long-Lived (GaAl) As DH Lasers Bonded with In Produced by Eliminating Deterioration of In Solder
High-Power CW Operation in V-Channeled Substrate Inner-Stripe Lasers with "Torch"-Shaped Waveguide : Waves, Optics and Quantum Electronics
Stable Single-Longitudinal-Mode Operation over Wide Temperature Range on Semiconductor Lasers with a Short External Cavity
Highly Reliable 150 mW CW Operation of Single-Stripe AlGaAs Lasers with Window Grown on Facets
GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs : Semiconductors and Semiconductor Devices
Temperature Dependence of Photoluminescence Properties in (111)- and (100)-Oriented GaAs/AlGaAs Quantum Well Structures : Surface, Interfaces and Films
Molecular Beam Epitaxial Growth of (Al_yGa_)_In_P on (100) GaAs : Condensed Matter

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