Crystal Growth during the Sintering of Ultrafine SiC Powders Containing Much Free-Si
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概要
- 論文の詳細を見る
Ultrafine powders of SiC containing a large amount of free-Si, which had been prepared by a gas-evaporation method, were sintered at various conditions with the aid of amorphous boron. Surfaces of sintered bodies were examined by scanning electron microscopy (SEM) and X-ray diffraction. Different growth features due to asymmetry in the evaporation of free-Si were observed on the top and bottom surfaces of sintered bodies. Remarkable grain growth of platelike and polyhedral crystals of SiC was observed in the single sintering at high temperature under the existence of free-Si and with the aid of boron. By the multiple sintering of the identical specimen, the existing region of 6H-SiC and remaining free-Si was clarified versus the sintering temperature and the amount of boron addition.
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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Ando Yoshinori
Department of Physics, Meijo University
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OHKOHCHI Masato
Department of Materials Science and Engineering, Meijo University
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Ando Yoshinori
Department Of Information Systems Faculty Of Business Administration And Information Science Tokyo U
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Ando Yoshinori
Department Of Applied Physics Faculty Of Engineering Nagoya University
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