Simulation of Chemical Amplification Resists

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概要

• 論文の詳細を見る

• A simulation model for chemical amplification resists is proposed. This model includes a bulk acid loss reaction and an acid diffusion, as well as a crosslinking reaction. Good agreement with experimental patterns was achieved only when these reactions were calculated self-consistently. The calculation revealed that, for designing chemical amplification resists, one of the key factors is the crosslinking reaction sensitivity to post-exposure bake (PEB) temperature. However, in quarter-micron pattern formation, the acid diffusion was found to significantly affect pattern profile as well as the crosslinking reaction dose.

• 社団法人応用物理学会の論文
• 1992-12-30

著者

• MATSUMOTO Hiroshi

  Microelectronics Research Laboratories, NEC Corporation

• Yoshino Hiroshi

  Microelectronics Research Laboratories Nec Corporation

• Matsumoto Hiroshi

  Microelectronics Research Laboratories Nec Corporation

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• Analysis of The Threshold Voltage Adjustment and Floating Body Effect Suppression for 0.1 μm Fully Depleted SOI-MOSFET
• Defect-Free Reactive Ion Etching of Silicon by SiF_4/Cl_2 Plasma
• Simulation of Chemical Amplification Resists

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