Dielectric Breakdown Strength of Grain-Oriented Bi_4Ti_3O_<12> Ceramics
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概要
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DC dielectric breakdown strength Eb of grain-oriented Bi_4Ti_3O_<12> ceramics fabricated by the hot-forging method and the cold-uniaxial pressing method has been studied. In the hot-forging sample with the X-ray orientation factor of 0.84, Eb was about 22 MV/m, when electric field was applied parallel to the pressing axis of the grain-oriented ceramics. On the other hand, Eb was about 16 MV/m, when the field was perpendicular to the pressing axis. It was found that grain orientation is effective in increasing Eb parallel to the pressing axis.
- 社団法人応用物理学会の論文
- 1992-09-30
著者
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Shoji Kazuo
Department Of Electrical Engineering Ashikaga Institute Of Technology
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Shoji Kazuo
Department Of Electrical Engineering Ashikaga Institure Of Technology
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Uehara Yasuo
Department Of Electrical Engineering Ashikaga Institute Of Technology
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Uehara Yasuo
Department Of Electrical Engineering Ashikaga Institure Of Technology
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Shoji Kazuo
Department of Electric and Electronic Engineering, Ashikaga Institute of Technology, 268-1 Omae, Ashikaga, Tochigi 326-8558, Japan
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