Segregation of As on GaAs(100) Surface during Abrasiorn Process Studied by X-Ray Photoelectron Spectroscopy and Auger Electron Spectroscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-11-15
著者
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Uemura Masao
Technology Development Center Toyohashi University Of Technology
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Iijima Y
Applied Materials Japan Inc. Chiba Jpn
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Hiraoka Kenzo
Faculty Of Engineering Yamanashi University
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IIJIMA Yoshitoki
Application and Research Center JEOL Ltd.
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MURAMOTO Koichi
Technology Development Center, Toyohashi University of Technology
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Muramoto Koichi
Technology Development Center Toyohashi University Of Technology
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- Segregation of As on GaAs(100) Surface during Abrasiorn Process Studied by X-Ray Photoelectron Spectroscopy and Auger Electron Spectroscopy
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