High-Resolution Proximity Exposure through a Phase Shifter Mask

概要

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A simple method to fabricate fine lines of photoresist has been developed. The method utilizes a mask containing an equal-width line-and-space pattern of the half-wavelength phase shifter. A film of photoresist formed on a substrate is placed in close proximity to the mask and exposed through the mask by flooding with a beam of light. The beam, diffracted by the mask, produces an interference pattern, which extends long enough to expose the film patternwise. The film is then developed to form a resist pattern. An array of 0.2-μm-spaced, 0.1-μm-wide lines of a positive photoresist has been obtained by this method using the i-line with a peak intensity at the wavelength of 0.365 μm. Calculation based on a rigorous solution of the two-dimensional diffraction problem indicates that a high-contrast 0.1 μm line-and-space exposure using the i-line is feasible if the light is polarized.
社団法人応用物理学会の論文
1993-10-15