AlGaAsSb Avalanche Photodiodes for 1.0-1.3-μm Wavelength Region

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1979-12-05

著者

• MOTOSUGI George

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Kagawa Toshiaki

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Motosugi George

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

関連論文

• Photoconductive Decay in Amorphous Silicon Films : III-2: AMORPHOUS SOLAR CELLS : Characterization
• Cleaving Process of GaAs Wafers
• ALGaAsb Photodiodes Lattice-Matched to GaSb
• Zn Diffusion into AlGaAsSb and Its Application to APD's
• AlGaAsSb Avalanche Photodiodes for 1.0-1.3-μm Wavelength Region
• Dependence of Surface Flatness on the LPE Condition of AlGaSb
• Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH Lasers
• Absorption-Modulation of Light in ZnSe Crystals and Its Application to a Page Composer
• The Effect of Mounting on the Pulsed Threshold of (Al, Ga)As DH Lasers
• Single Longitudinal Mode Oscillation of Semiconductor Lasers by Optical Coupling

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