Dependence of Surface Flatness on the LPE Condition of AlGaSb
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-11-05
著者
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Kagawa Toshiaki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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MOTOSUGI Georoge
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation,
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Motosugi Georoge
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
KAGAWA Toshiaki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation,
関連論文
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- AlGaAsSb Avalanche Photodiodes for 1.0-1.3-μm Wavelength Region
- Dependence of Surface Flatness on the LPE Condition of AlGaSb
- Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH Lasers