Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH Lasers
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-11-05
著者
-
MOTOSUGI George
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Kagawa Toshiaki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Kagawa Toshiaki
Musashino Electrical Communication Laboratory Nippon Telegraphand Telephone Public Corporation
-
Motosugi George
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Motosugi George
Musashino Electrical Communication Laboratory Nippon Telegraphand Telephone Public Corporation
関連論文
- Photoconductive Decay in Amorphous Silicon Films : III-2: AMORPHOUS SOLAR CELLS : Characterization
- Cleaving Process of GaAs Wafers
- ALGaAsb Photodiodes Lattice-Matched to GaSb
- Zn Diffusion into AlGaAsSb and Its Application to APD's
- AlGaAsSb Avalanche Photodiodes for 1.0-1.3-μm Wavelength Region
- Dependence of Surface Flatness on the LPE Condition of AlGaSb
- Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH Lasers
- Absorption-Modulation of Light in ZnSe Crystals and Its Application to a Page Composer
- The Effect of Mounting on the Pulsed Threshold of (Al, Ga)As DH Lasers
- Single Longitudinal Mode Oscillation of Semiconductor Lasers by Optical Coupling