Note on Impurity Oxygen in Gallium Phosphide
スポンサーリンク
概要
- 論文の詳細を見る
Zn-doped GaP crystals were grown from the solutions either in carbon-coated quartz containers or in bare containers. These sorts of crystals showed markedly different characteristics in the photo- and electroluminescences, namely, the crystals obtained from the bare containers emitted a red light (675 mμ) and a weak green light (560 mμ), while the crystals from the carbon-coated containers emitted the green light only. It has been concluded from these results that most of oxygen, an impurity in GaP, is introduced from heated quartz container during the fabrication of crystals and re-confirmed that the oxygen correlates closely with the red emission although its more detailed behaviour is not made clear yet.
- 社団法人応用物理学会の論文
- 1969-07-05
著者
-
Yamamoto Nobuyuki
University Of Osaka Prefecture
-
Miyauchi Takeshi
University Of Osaka Prefecture
-
Sonomura Hajimu
University of Osaka Prefecture
関連論文
- Preparation of Aluminum Phosphide by Solution-Growth Method
- Note on Impurity Oxygen in Gallium Phosphide
- Electroluminescences of Zn-diffused GaP Diodes and Their Electrical Characteristics
- Electrical Properties of Gallium Phosphide
- Electroluminescence and Crystallographic Polarity of Gallium Antimonide
- Injection Electroluminescence in Gallium Antimonide