Injection Electroluminescence in Gallium Antimonide

概要

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Electroluminescent spectra have been measured for four types of gallium antimonide: undoped p-type, Zn-doped p-type, Sn-doped p-type and Se-doped n-type samples. All the radiations are considered to be due to recombinations of electrons and holes via impurity centers. The levels of recombination centers are estimated to be about 0.06eV for undoped, 0.055eV for Zn-doped and Sn-doped, and 0.01eV for Se-doped samples. These values are consistent reasonably with ionization energies of an acceptor and a donor in GaSb calculated from the simple hydrogen like model. As compared with the present results, the emission lines of about 0.72eV and 0.78eV at 77°K observed frequently in GaSb p-n junctions may be interpreted to be due to the recombinations in the p-region and in the n-region, respectively.
社団法人応用物理学会の論文
1970-09-05