C-V Characteristics of Heat-Treated Si-SiO_2 Interface

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1968-09-05

著者

• Kubo Shuji

  Matsushita Research Institute Tokyo Inc.

• ICHINOHE Eisuke

  Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.

• Ichinohe Eisuke

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

関連論文

• The Influence of Dissolved Oxygen in SiO_2 on C-V Characteristics
• Effects of Preoxidation Treatment on MOS Transistor Characteristics
• C-V Characteristics of Heat-Treated Si-SiO_2 Interface
• Influence of Lattice Defects in Single Crystal on Characteristics of Silicon-Vidicon

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