The Influence of Dissolved Oxygen in SiO_2 on C-V Characteristics

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概要

• 論文の詳細を見る

• Characteristic of Si-SiO_2 interface which is obtained by dry O_2 oxidation under various conditions and by annealing in nitrogen atmosphere, are investigated by the capacitance-voltage measurement. It is shown that concentration of dissolved oxygen in SiO_2 is in linear proportion to flat band voltage in C-V curve, and is closely related to "shoulder surface stage". The experimental results suggest that aluminum metal on SiO_2 have gettering action for dissolved oxygen in heat treatment of Si-SiO_2-Al system at 300-500℃.

• 社団法人応用物理学会の論文
• 1967-09-05

著者

• Kubo Shuji

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.:(present Address) Matsushita Res

• Kubo Shuji

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

• ICHINOHE Eisuke

  Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.

• Ichinohe Eisuke

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

関連論文

• Effects of Heat Treatment on Thermally Oxidized Silicon
• The Influence of Dissolved Oxygen in SiO_2 on C-V Characteristics
• C-V Characteristics of Heat-Treated Si-SiO_2 Interface
• Effects of Aluminum Electrode and Hydrogen Gas during Heat Treatments on MOS Structure

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