Voltage Sensitivity Control of Hyper-Abrupt Capacitance Diode by Vapor Growth Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1966-04-15
著者
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Ito Akiko
Central Research Laboratories Mitsubishi Electric Corporation
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Ito Akiko
Central Res. Lab. Mitsubishi Electric Corp.
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KONDO Akihiro
Central Res. Lab., Mitsubishi Electric Corp.
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IWATA Yasumasa
Central Res. Lab., Mitsubishi Electric Corp.
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Iwata Yasumasa
Central Res. Lab. Mitsubishi Electric Corp.
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Kondo Akihiro
Central Res. Lab. Mitsubishi Electric Corp.
関連論文
- Etch Pit Observation of Very Thin {001}-GaAs Layer by Molten KOH
- Photoluminescence Study of (Ga, Al) As Layer Grown from Ga Solution Pre-Heated at High Temperature
- Voltage Sensitivity Control of Hyper-Abrupt Capacitance Diode by Vapor Growth Process
- Characteristics of the Junction-Stripe-Geometry GaAs-GaAlAs Double-Heterostructure Lasers
- Current Multiplication Rate at the Peripheries of Buried Junctions
- Improvement of Thermal Resistance of Silicon IMPATT Diode