Characteristics of the Junction-Stripe-Geometry GaAs-GaAlAs Double-Heterostructure Lasers

概要

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A new junction-stripe-geometry DH laser has been examined, in which the current is confined into a narrow stripe by p-n junctions. Because of the difference in the diffusion potentials between two kinds of p-n junctions, a large portion of the current flows across the junction of the lower diffusion potential. It is shown that to obtain sufficient confinement of the current for lasing, the difference of diffusion potentials should be larger than 0.35eV, and the series resistance at the stripe region less than 1×10^<-4>Ωcm^2. The minimum threshold currents are 160mA and 270mA in pulse and cw operations, respectively. The effect of the stripe width has been examined, and the optimum value of about 6 μm is found, in which case relatively homogeneous lasing occurs, and the lateral spreading of carriers has little influence on the threshold current.
社団法人応用物理学会の論文
1974-10-05