GaAs Transmission Photocathode Grown by MBE
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概要
- 論文の詳細を見る
Negative-electron-affinity (NEA) GaAs/GaP photocathodes have been grown by MBE for the first time. The surfaces of GaAs emitters are atomically smooth. The compositionally graded interface layer GaAsP produced by infer-diffusion at the GaAs/GaP interface has played an important role for a high photoemissive quantum yield and for the spectral response curves of photoemission from the thin GaAs layers.
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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Niigaki Minoru
Research Institute Of Electronics Shizuoka University
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Hagino Minoru
Research Institute of Electronics, Shizuoka University
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Hagino Minoru
Research Institute Of Electronics Shizuoka University
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Miyao Masahiro
Research Institute Of Electronics Shizuoka University
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CHINEN Kouyu
Research Institute of Electronics, Shizuoka University
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Chinen Kouyu
Research Institute Of Electronics Shizuoka University
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