Solid Solubilities of Group-III and Group-V Dopants in Pulsed Laser-Annealed Silicon

概要

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Surfaces, {211} and {111}, of single crystal silicon uniformly doped with phosphorus were melted by laser irradiation. The interface segregation coefficients k^*'s were obtained from the redistributed impurity profile as determined by secondary-ion mass spectrometry. It was found that k^*=k_0 for {211} surfaces and k^*<k_0 for {111} surfaces in the dilute range of impurity concentration, where k_0 is the equilibrium segregation coefficient. The maximum solid solubility of B, Al, Ga, P, As, or Sb in silicon is explained quantitatively by assuming that atoms in the liquid phase ordering at interface are frozen during rapid solidification.
社団法人応用物理学会の論文
1980-10-05