IN SITU X-RAY TOPOGRAPHIC STUDY ON MELT GROWTH OF SILICON(<Special Issue>Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School)

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概要

• 論文の詳細を見る
• 日本結晶成長学会の論文
• 1978-08-25

著者

• Chikawa Jun-ichi

  Nhk Broadcasting Science Research Laboratories

関連論文

• (Invited) Swirl Defects in Silicon Crystals : B-3: CRYSTAL GROWTH AND DEFECTS
• Impurity Incorporation at Melt-Crystal Interfaces in Pulsed Laser Annealing of Silicon
• IN SITU X-RAY TOPOGRAPHIC STUDY ON MELT GROWTH OF SILICON(Fundamentals of Vapour Growth and Epitaxy : Lecture Notes of the ICVGE-4 Specialists' School)
• Solid Solubilities of Group-III and Group-V Dopants in Pulsed Laser-Annealed Silicon

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