Impurity Incorporation at Melt-Crystal Interfaces in Pulsed Laser Annealing of Silicon

概要

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Segregation of P, C, and Fe impurities in laser annealed crystals was observed by secondary-ion mass spectrometry. By assuming that the interface segregation coefficients k^* are equal to the equilibrium coefficients k_0 even at a growth rate of V=200cm/s (for Fe, 0.01<k^*<0.07), the diffusion coefficients of these melt impurities took the same value of 3×10^<-4> cm^2/s, which agrees with the widely accepted values. The dwell time of Si atoms on the interface was found to be of the order of 10^<-10> s, far smaller than that postulated previously to explain the orientation-dependence of k^* at a low V. The difference between laser annealing and usual crystal growth is discussed.
社団法人応用物理学会の論文
1980-03-05