Photodoping Sensitivity of Ag into Amorphous Ge_<30>S_<70> Films
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概要
- 論文の詳細を見る
Photodiffusion of Ag into Ge_<30>S_<70> films with and without prior exposure to light is studied. The photodoping sensitivity of photostructural transformed (photobleached) films is greatly affected by the degree of optical transmission edge shift of the films and decreases compared with that of as-evaporated (unbleached) film. This result is very different from that of Ag photodoping of arsenic-chalcogenide glasses such as As_2S_3 and As_2Se_3 reported in the literature.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Ban Seiji
Materials Research Laboratory Nagoya Institute Of Technology
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Maruno Shigeo
Material Research Laboratory Nagoya Institute Of Technology
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Maruno Shigeo
Materials Research Laboratory Nagoya Institute Of Technology
関連論文
- Switching Phenomena in the Glasses of the System Ge_Se_Te_x
- Effect of Substrate Temperature on Electrical Properties of Amorphous Germanium Films
- Electrical Properties of As_2S_3-Ag Glasses
- Diffusion of Metals in Arsenic Trisulfide Glass Films
- Formation of Negative Resistance Path in Amorphous Germanium Thin Film
- Measurements of Aluminum X-Ray Emission Bands Shift by EPMA
- Photodoping Sensitivity of Ag into Amorphous Ge_S_ Films