X-Ray Topographic Study of Defects in GaAs Epi-Layers Grown by Liquid Phase Epitaxial Method
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-06-05
著者
-
Takagi Mieko
Department Of Physics Tokyo Institute Of Technology
-
KUMAR Krishna
Department of Physics, Tokyo Institute of Technology
-
Kumar Krishna
Department Of Physics Tokyo Institute Of Technology
-
Kumar Krishna
Department Of Physics Indian Institute Of Technology
関連論文
- Domain Formation in Ferroelectric BaTiO_3 Studied by X-ray Topography. II
- Domain Formation in Ferroelectric BaTiO_3 Studied by X-Ray Topography.I.
- X-Ray Bragg Reflection and Infrared Absorption Topography of Ferroelectric NaNO_2
- X-Ray Topographic Study of Defects in GaAs Epi-Layers Grown by Liquid Phase Epitaxial Method
- Topographic Study on Domain Boundaries in TGS.I
- Topographic Study on Domain Boundaries in TGS.II
- X-Ray Topographic Study on Lattice Strain at 180°Domain Wall in Ferroelectric BaTiO_3
- Structure of 180° Domain Walls in Ferroelectric Thiourea
- Growth of Ammonium Chloride Dendrites from Vapor Phase