Designing of a Buried-Channel Charge-Coupled Device

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1976-05-05

著者

• Ohtsuki Osamu

  Fujitsu Labolatories Ltd.

• Tanikawa Kunihiro

  Fujitsu Laboratories Ltd.

• SHIMOHASHI Akira

  Fujitsu Laboratories Ltd.

• ARAKAWA Isao

  Fujitsu Laboratories Ltd.

関連論文

• Properties of Metal-Borosilicate Glass-InSb Oxide-p-Type InSb Structures
• The Vapor Growth of Pb_Sn_xTe Single Crystals
• The Temperature Dependence of Hall Coefficient of Pb_Sn_Te Single Crystals
• Electroreflectance Measurements on Cd_xHg_Te
• The Crystal Growth of Homogeneous Hg_Cd_xTe by the Bridgman Method
• Hall Effect in Hg_Cd_xTe
• Anomalous Hall Effect in Hg_Cd_xTe
• CCD with Meander Channel
• Designing of a Buried-Channel Charge-Coupled Device
• The Operational Mode in a Buried-Channel Charge-Coupled Device

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