The Operational Mode in a Buried-Channel Charge-Coupled Device
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-10-05
著者
-
Ohtsuki Osamu
Fujitsu Labolatories Ltd.
-
Tanikawa Kunihiro
Fujitsu Laboratories Ltd.
-
Tokuhira Shigenori
Fujitsu Laboratories Ltd.
-
SHIMOHASHI Akira
Fujitsu Laboratories Ltd.
関連論文
- Properties of Metal-Borosilicate Glass-InSb Oxide-p-Type InSb Structures
- The Vapor Growth of Pb_Sn_xTe Single Crystals
- The Temperature Dependence of Hall Coefficient of Pb_Sn_Te Single Crystals
- Electroreflectance Measurements on Cd_xHg_Te
- The Crystal Growth of Homogeneous Hg_Cd_xTe by the Bridgman Method
- Hall Effect in Hg_Cd_xTe
- Anomalous Hall Effect in Hg_Cd_xTe
- CCD with Meander Channel
- Designing of a Buried-Channel Charge-Coupled Device
- The Operational Mode in a Buried-Channel Charge-Coupled Device