Oxidized Porous Silicon-Silicon Interface Investigation by C-V Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-03-05
著者
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Imai Kazuo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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YASHIRO Takehisa
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yashiro Takehisa
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Application of IPOS technique to MOS ICs : A-5: DEVICE TECHNOLOGY (2)
- Oxidized Porous Silicon-Silicon Interface Investigation by C-V Method
- Surface State Formation during Long-Term Bias-Temperature Stress Aging of Thin SiO_2-Si Interfaces
- Properties of MNMOS Structure Interposing Platinum at Si_3N_4-SiO_2 Interface
- Effect of Platinum Particles in Dual SiO_2 Interface on Charge Storage Properties