Microwave Oscillation in Germanium Avalanche Diodes. III.

スポンサーリンク

概要

• 論文の詳細を見る

• Microwave performance of avalanche diodes is analyzed by taking deep recombination centres in the depletion layers into account. It is found that the theoretical formulation assuming an adequate value for the carrier capture time well explains the small signal impedance experimentally obtained. This theory is also applied to the calculation of the relation between the threshold frequency and the breakdown voltage, and shown to be in good agreement with the experimental result on germanium avalanche diodes.

• 社団法人応用物理学会の論文
• 1973-09-05

著者

• Takeshima Masumi

  Research Laboratory Of Matsushita Electronics Corp.

関連論文

• Germanium Microwave-Oscillator Diodes
• Continuous Microwave Oscillation from Germanium Diodes
• Microwave Oscillation in Germanium Avalanche Diodes I
• Microwave Oscillation in Germanium Avalanche Diodes II
• Microwave Oscillation in Germanium Avalanche Diodes. III.

スポンサーリンク