RF-Sputtered n-p Heterojunction Diodes of ZnSe-Si and ZnSe-GaAs
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概要
- 論文の詳細を見る
ZnSe-Si and ZnSe-GaAs n-p heterojunctions are produced by rf-sputtering of ZnSe onto single crystal wafers of Si and GaAs at 200℃. These sputtered diodes contain high resistivity ZnSe layers, and the SCLC is predominant in the forward current-voltage characteristics. Annealing the diodes in Zn vapour at 700℃ for 1 hr results in the decrease of the SCLC, and the thermal emission current in series with tunneling current becomes predominant. A bias-temperature treatment of the sputterd diodes at 155℃ in a forward bias condition is found to enhance their photovoltaic effects.
- 社団法人応用物理学会の論文
- 1973-03-05
著者
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Hayakawa Shigeru
Wireless Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Hayakawa Shigeru
Wireles Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Wasa Kiyotaka
Wireless Research Laboratory Matsushita Electric Industrial Co. Ltd.
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WASA Kiyotaka
Wireless Research Laboratory, Matsushita Electric Industrial Co., Ltd.
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