Optical Absorption Coefficient in GaN Grown by Vapour Phase Epitaxy Using GaBr_3 and NH_3

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1973-11-05

著者

• Morimoto Yasuo

  Research Laboratory Oki Electric Industry Co. Ltd.

• USHIO Shintaro

  Research Laboratory of OKi Electric Industry Co., Ltd.

• Ushio Shintaro

  Research Laboratory Of Oki Electric Industry Co. Ltd.

• Ushio Shintaro

  Research Laboratory Oki Electric Industry Co. Ltd.

関連論文

• Violet-Electroluminescence from Mg-Doped GaN Point Contact Diodes
• Effect of External Current on the Magnetization of Non-Ideal Type II Superconductors
• Magnetic Behavior and Effect of Transport Current on It in Superconducting Nb-Zr Wire
• Magnetic Behavior in Superconducting Nb-Zr Wire
• Infrared Absorption in GaN Grown by Vapour Phase Epitaxy Using GaBr_3 and NH_3
• Optical Absorption Coefficient in GaN Grown by Vapour Phase Epitaxy Using GaBr_3 and NH_3
• Anomalous Behaviour in GaN-Zn Junctions
• Anomalous I-V Characteristics in Mg-Doped GaN Point Contact Diodes
• Photoluminescence Studies of N-P-N GaAs_P_ Crystals

スポンサーリンク