Photoluminescence Studies of N-P-N GaAs_<0.6>P_<0.4> Crystals

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1976-09-05

著者

• Morimoto Yasuo

  Research Laboratory Oki Electric Industry Co. Ltd.

• UCHIHO Kohsuke

  Research Laboratory, OKI Electric Industry Co., Ltd.

• USHIO Shintaroh

  Research Laboratory, OKI Electric Industry Co., Ltd.

• Uchiho Kohsuke

  Research Laboratory Oki Electric Industry Co. Ltd.

• Ushio Shintaroh

  Research Laboratory Oki Electric Industry Co. Ltd.

関連論文

• Violet-Electroluminescence from Mg-Doped GaN Point Contact Diodes
• Infrared Absorption in GaN Grown by Vapour Phase Epitaxy Using GaBr_3 and NH_3
• Optical Absorption Coefficient in GaN Grown by Vapour Phase Epitaxy Using GaBr_3 and NH_3
• Anomalous Behaviour in GaN-Zn Junctions
• Anomalous I-V Characteristics in Mg-Doped GaN Point Contact Diodes
• Photoluminescence Studies of N-P-N GaAs_P_ Crystals

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