Determination of the Mole Fraction of GaP in GaAsP Single Crystal by A New X-Ray Diffraction Technique

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1971-08-05

著者

• Kishino Seigo

  Central Research Laboratory

関連論文

• Anomalous Enhancement of Transmitted Intensity in Asymmetric Diffraction of X-Rays from a Single Crystal
• Lattice Parameters of Ion-Implanted Silicon Crystals
• Anomalous Transmission in Bragg-Case Diffraction of X-Rays
• X-Ray Topographic Study of Lattice Defects Related with Degradation of GaAs-Ga_Al_xAs Double-Heterostructure Lasers : B-7: SEMICONDUCTOR LASERS (II)
• A New Technique of X-Ray Diffraction Microscopy of Scanning Type
• Enhanced Sensitivity of Anomalously Transmitted Intensity to Lattice Defects in Asymmetric Bragg-Case Diffraction of X-Rays
• Theoretical Considerations on Bragg-case Diffraction of X-rays at a Small Glancing Angle
• Characterization of Dislocations in β'-Gd_2(MoO_4)_3
• Determination of the Mole Fraction of GaP in GaAsP Single Crystal by A New X-Ray Diffraction Technique

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