Effects of the Collector Depletion Layer Width on the Characteristics of Drift Transistor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1963-04-15
著者
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Nakahara Osamu
Semiconductor Division Tokyo Sanyo Electric Company
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GOTO Kazuyoshi
Semiconductor Plant, Tokyo Sanyo Electric Company
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MITANI Toshio
Semiconductor Plant, Tokyo Sanyo Electric Company
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SUNAGUCHI Tetsuro
Semiconductor Plant, Tokyo Sanyo Electric Company
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Mitani Toshio
Semiconductor Plant Tokyo Sanyo Electric Company
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Goto Kazuyoshi
Semiconductor Plant Tokyo Sanyo Electric Company
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Sunaguchi Tetsuro
Semiconductor Plant Tokyo Sanyo Electric Company
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Nakahara O.
Semiconductor Plant, Tokyo Sanyo Electric Company
関連論文
- X-Ray Micrographic Observation of Imperfections in Si Wafer near the Oxide Film Edge before and after the Localized Diffusion
- Dynatron-Type Negative Resistance Observed in the Collector-Voltage-Saturation Region of the Junction Transistor
- Effects of the Collector Depletion Layer Width on the Characteristics of Drift Transistor
- The Base Resistance of the Transistor in the Saturated Region
- Observation of an Anomaly in Transistor Characteristics