4.1 ミリ波集積回路の開発 : 4. ミリ波デバイスの開発動向 : : 大型装置計測のためのミリ波技術の開発

概要

論文の詳細を見る
A basic principle of heterojunction bipolar transistors(HBT's)and the structure of the integrated circuit for the microwave and millimeter-wave frequency range is described. As examples of the millimeter-wave integrated circuit, an oscillator, a frequency mixer, and an integrated detector are shown. The monolithic oscillator generates an 80GHz signal using a GaAs HBT with f_T=130GHz and f_<max>=180GHz. The mixer using Schottky-barrier diodes(SBD's)with an HBT IF amplifier has a 9.5dB conversion gain at 95GHz. It includes a rat-race circuit as a signal isolation element. The integrated detector chip has a bow-tie antenna, an SBD mixer, and an HBT IF amplifier. The chip is mounted on a special base and is measured at 85-99GHz.
社団法人プラズマ・核融合学会の論文
1998-12-25