単層ポリシリコン電極を採用した高感度1/4型(対角4.5mm)36万画素FT-CCDイメージセンサ(<論文小特集>イメージセンシング技術)

概要

論文の詳細を見る
We experimentally fabricated a frame transfer CCD (FT-CCD) image sensor for Recommendation ITU-R BT, 601 with a single-layer poly-silicon electrode structure. We set the gap to 0.45 μm to balance charge-handling capability against optical sensitivity. We optimized the membrane structure to improve optical sensitivity. We sandwiched the poly-silicon gate between two silicon-nitride layers with a high refractive index to suppress reflection on the poly-silicon surface. The sensitivity was improved 40% with this structure. An FT-CCD image sensor constructed using this new structure is very simple and has high performance.
社団法人映像情報メディア学会の論文
2000-02-15