単層Poly Si電極で形成したFT-CCDイメージセンサの構造と特性

概要

論文の詳細を見る
We experimentally fabricated a 1/4-inch 360k pixel FT-CCD image sensor for ITU601 format with a single layer poly-Si electrode structure. We have adopted 0.45um as a gap width to keep the balance of the charge handling capability and optical sensitivity. We optimized the membrane structure to improve optical sensitivity. We adopted the sandwich structure that poly-Si gate is put between two silicon-nitride layers which have a high refractive index, to suppress the reflection on the poly-Si surface. 30% of sensitivity improvement was achieved by this structure. FT-CCD image sensor with this new structure is very simple and has high performance.
社団法人映像情報メディア学会の論文
1999-07-30