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In this paper, we propose a method of constructing a multi-wavelength IR imager. The optical cavity structure has been used to improve the sensitivity of the IR imager for a long time. However, it can also be used as an on-chip interference filter. We developed two kinds of multi-wavelength IR imagers based on the 410K pixel PtSi IRCCD, which has been previously reported by us. The type A multi-wavelength IR imager is composed of three kinds of pixels. In the device, three kinds of pixels with defferent spectral responsivities are arranged in the form of a stripe in the vertical direction of the CCD. The type A device is used within the wavelength range of 3-5μm. The type B device is used within the wavelength range of 1.5-2.5μm
一般社団法人映像情報メディア学会の論文
1999-02-26