Si基板上へのGaAs MESFETとInGaP LEDの3次元集積化 : 情報入力

概要

論文の詳細を見る
Process technologies were studied for three dimensional integration of compound semiconductors on Si. The device characteristics of GaAs MESFETs and InGaP LEDs on Si were examined for the purpose. Three dimensional structure of an InGaP LED stacked on a GaAs MESFET was fabricated on a Si substrate as an application of a newly developed SOI method to opto-electoronic integration. For further integration, a thermally stable ohmic contact to GaAs was developed. The fabrication of the 5x7 InGaP LED matrix stacked on the driver GaAs MESFETs was also described.
社団法人映像情報メディア学会の論文
1991-05-24