Low Voltage Driving ZnS : Mn Thin Film Electroluminescent Device using Layered BaTiO_3 Thin Films
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概要
- 論文の詳細を見る
In order to prepare low voltage driving TFELD, the layered BaTiO_3 thin films with high performance were used as the lower dielectric layer. For the layered BaTiO_3,the new stacking method using the continuous cooling of the substrate during the deposition of the amorphous layer after the deposition of the polycrystalline layer at higher temperature was introduced. The layered BaTiO_3 thin film showed higher capacitance per unit area and breakdown strength than the double layered BaTiO_3 thin film prepared by the conventional stacking method. It was confirmed that the insulating ability of the single polycrystalline BaTiO_3 thin film highly depended on its thickness. The ZnS : Mn TFELD using the layered BaTiO_3 thin film showed a turn-on voltage of 〜50 volts and a saturated brightness of 2500 cd/m^2,while the device with the single polycrystalline BaTiO_3 thin film did not show stable emission.
- 社団法人映像情報メディア学会の論文
- 1995-10-24
著者
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Hahn T
Korea Inst. Sci. And Technol. Seoul Kor
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Lee Y.h.
Division Of Electronics And Information Technology Korea Institute Of Science And Technology
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Oh M.H.
Division of Electronics and Information Technology, Korea Institute of Science and Technology
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Yoon K.h.
Lcd Lab. Lg Electronics Inc.
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Lee Y
Division Of Electronics And Information Technology Korea Institute Of Science And Technology
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Song M.H.
Division of Electronics and Information Technology Korea Institute of Science and Technology
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Hahn T.S.
Division of Electronics and Information Technology Korea Institute of Science and Technology
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Yoon K.H.
Department of Ceramics Engineering, Yonsei University
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Oh M.h.
Dept.materials Science & Engineering Knut
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Oh M.h.
Division Of Electronics And Information Technology Korea Institute Of Science And Technology
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