Low Voltage Driving ZnS:Mn Thin Film Electroluminescent Device using Layered BaTiO_3 Thin Films

概要

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In order to prepare low voltage driving TFELD, the layered BaTiO_3 thin films with high performance were used as the lower dielectric layer. For the layered BaTiO_3, the new stacking method using the continuous cooling of the substrate during the deposition of the amorphous layer after the deposition of the polycrystalline layer at higher temperature was introduced. The layered BaTiO_3 thin film showed higher capacitance per unit area and breakdown strength than the double layered BaTiO_3 thin film prepared by the conventional stacking method. It was confirmed that the insulating ability of the single polycrystalline BaTiO_3 thin film highly depended on its thickness. The ZnS:Mn TFELD using the layered BaTiO_3 thin film showed a turn-on voltage of 〜50 volts and a saturated brightness of 2500 Cd/m^2, while the device with the single polycrystalline BaTiO_3 thin film did not show stable emission.
社団法人電子情報通信学会の論文
1995-10-24