Study of the Processing Parameters for Field Emission Displays : OTHER DISPLAY

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概要

• 論文の詳細を見る

• The complete structure of gated silicon field emitter arrays (GSFEA) based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp Si tip arrays were formed using wet chemical etching and low-temperature oxidation sharpening (LTOS). A mesh structure has been used to calculate the electron-beam behavior in the vicinity of the microemitter apex. The focus effect of field emission was proven to be very effective. Four types of microtips have been simulated to understand the effects of the field-enhancement factors and the effective emission area.

• 一般社団法人映像情報メディア学会の論文
• 1993-10-28

著者

• Wang C.c.

  Department Of Electronics Engineering And Institute Of Electronics

• Feng M.s.

  Institute Of Materials Science And Engineering National Chiao Tung University

• Cheng H.c.

  Department Of Electronics Engineering And Institute Of Electronics

• Hsieh I.j.

  Department Of Electrical Engineering Chung-hua Polytechnic Institute

• Ku T.k.

  Department Of Electronics Engineering And Institute Of Electronics

• Huang C.M.

  Electronics Research and Service Organization, ITRI

• Huang C.m.

  Electronics Research And Service Organization Itri

関連論文

• Hydrogen Passivation of TFTs with Different Film Structure : TFT TECHNOLOGIES
• Passivation Effects of Different Plasma on the Polycrystalline Silicon Thin Film Transistors : TFT TECHNOLIGIES
• Study of the Processing Parameters for Field Emission Displays : OTHER DISPLAY

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